Photodiode

Precision Optical Detection

Silicon & InGaAs Photodiodes for Sensing and OEM Photonics

Lumi supplies silicon photodiodes and InGaAs PIN detectors for near-infrared sensing, optical monitoring, optical communication and TDLAS measurement. Choose by spectral response, responsivity, dark current, junction capacitance, bandwidth, photosensitive area and package.

  • Silicon Photodiode
  • InGaAs PIN
  • 940 nm Detection
  • 900–1700 nm
  • TO-5 / TO52
  • SMD
  • Receiver Integration
Detector Fundamentals

What Is a Photodiode?

A photodiode is a semiconductor detector that converts incident optical power into electrical current. In an optical measurement system, the laser, VCSEL or other light source is the emitter; the photodiode is the receiver or monitor.

Receiver performance is determined by more than wavelength alone. It depends on the light level reaching the active area, responsivity, detector noise, capacitance, circuit bandwidth and environmental conditions.

Silicon photodiode in a metal TO package from Lumi
Silicon photodiode discrete detector example.
Detector Material

Silicon vs InGaAs PIN Photodiodes

ParameterSilicon PhotodiodeInGaAs PIN Photodiode
Detection directionVisible and near-infrared lightLonger near-infrared wavelengths
Lumi published products1206 SMD and 940 nm-focused TO-5 devices900–1700 nm InGaAs PIN detector
Example wavelengths940 nm1310, 1550, 1650 nm
Representative package1206 SMD / TO-5TO52
Application examplesProximity, monitoring, compact sensingTDLAS sensing, optical monitoring and communication
Live Detector Catalogue

Explore Lumi Photodiode Products

Browse our current discrete and integrated optical detection devices. Open each product for its detailed spectral, electrical and mechanical data.

WooCommerce may also show integrated devices assigned to the Photodiode category, such as a VCSEL + photodiode component or BOSA with a receiver. These are identified by their own product names.

Existing Discrete Devices

Current Silicon and InGaAs Detector Options

ProductReported product parametersTypical use
940 nm Silicon TO-5940 nm typical peak response; 162 µA typical light current under specified test condition; ≤10 nA dark current; 20 pF typical capacitance940 nm optical sensing and detection
JC1206PD0224 Silicon SMD1206 package; ≤10 nA reverse dark current; ~1 pF typical capacitance; ≥33 V breakdownCompact PCB optical sensing
InGaAs PIN TO52900–1700 nm spectral range; 1.05 A/W typical responsivity at 1550 nm; ≤3 nA dark current1310/1550 nm detection and near-IR TDLAS
Real Product Imagery

Representative Photodiode Package Formats

940nm silicon photodiode TO-5 metal package
940 nm Silicon Photodiode — TO-5
JC1206PD0224 silicon SMD photodiode
Silicon Photodiode — 1206 SMD
900 to 1700nm InGaAs PIN photodiode sensor in TO package
InGaAs PIN Photodiode — Near-IR Detection
Device Characterization

Spectral Response and Package Drawings

Measured spectral response graph of Lumi silicon photodiode
Example silicon detector spectral-response graph.
JC1206PD0224 relative responsivity versus wavelength graph
1206 SMD relative responsivity versus wavelength.
940nm silicon TO5 photodiode package pin definition drawing
TO-5 package and pin assignment.
JC1206PD0224 SMD photodiode external dimensions
JC1206PD0224 mechanical dimensions.
Receiver Engineering

Six Parameters to Check When Selecting a Photodiode

01 · Spectral Response

Select a material and device whose sensitivity covers the wavelength emitted by your source.

02 · Responsivity

Use A/W at the relevant wavelength to estimate photocurrent from received optical power.

03 · Dark Current

Consider unwanted current and noise under the intended bias and temperature.

04 · Junction Capacitance

Evaluate the trade-off between active area, capacitance and amplifier bandwidth.

05 · Bandwidth / Speed

Confirm suitability for modulation frequencies, pulses and system time response.

06 · Active Area & Package

Balance alignment tolerance, receiver footprint, SMD vs TO assembly and thermal conditions.

Emitter-Detector Selection

Match Photodiodes with Laser Diodes or VCSELs

System exampleOptical sourceDetector directionEngineering consideration
940 nm proximity / optical detection940 nm VCSEL or IR sourceSilicon photodiodeSensitivity, active area and background-light behavior
1310/1550 nm optical receiverDFB or FP laser diodeInGaAs PIN photodiodeBandwidth, responsivity and optical power budget
~1650 nm methane TDLASWavelength-specific DFB laser900–1700 nm InGaAs PIN detectorAbsorption line, tuning and detector wavelength coverage
Integrated Photonics

Photodiodes in VCSEL and BOSA Assemblies

Emitter + Detector

940 nm VCSEL with Photodiode

The 1616VCA940R8-PD0224-Z integrates a 940 nm VCSEL emitter and photodetector in a compact 1616 SMD format for optical sensing designs.

Integrated 940nm 1616 VCSEL and photodiode product

Explore VCSEL Products →

Integrated Tx / Rx

BOSA with PIN Receiver

Selected optical sub-assemblies combine a DFB transmitter, PIN receiver and WDM optics with temperature control for bidirectional optical paths.

Cooled BOSA optical assembly with integrated receiver

Explore BOSA Assemblies →

Optical Detection

Where Lumi Photodiodes Fit

940 nm Infrared Sensing

Discrete silicon detectors for VCSEL/IR source pairing, object sensing and optical monitoring.

TDLAS Gas Analysis

InGaAs PIN wavelength coverage for compatible near-IR absorption-spectroscopy systems.

Optical Communication

Detection and monitoring at 1310 nm and 1550 nm system wavelengths.

Optical Power Monitoring

Photodiode feedback in laser modules, optical instruments and controlled emitters.

Compact Embedded Optics

1206 SMD silicon detectors for space-constrained PCB integrations.

OEM Receiver Modules

Detector selection coordinated with optical source, package, amplifier and environmental conditions.

OEM Detector Integration

What to Specify for a Photodiode RFQ

Optical Input

  • Target wavelength or spectral band
  • Expected received optical power or irradiance
  • Optical geometry and photosensitive area
  • Continuous, modulated or pulsed illumination

Electrical & Mechanical

  • Bias, dark current and responsivity needs
  • Capacitance, speed and bandwidth
  • SMD or TO mechanical format and pinout
  • Operating temperature, assembly and quantity

Technical FAQ

Photodiode Engineering Questions

What does a photodiode measure?

A photodiode converts incident light to a photocurrent. Its output depends on incident optical power, wavelength and device operating conditions.

Is silicon suitable for 1550 nm detection?

Silicon is generally not the suitable material for standard 1550 nm receivers. InGaAs PIN photodiodes are commonly used in that spectral region.

Which Lumi photodiodes support 940 nm sensing?

The current portfolio includes a 940 nm-focused TO-5 silicon device and a compact 1206 SMD silicon photodiode.

Can the 900–1700 nm InGaAs detector be paired with a methane DFB laser?

Its published wavelength range covers the near-IR methane-sensing region, but system performance depends on wavelength, receiver noise, optical power and amplifier design.

What is responsivity?

Responsivity is photocurrent per unit incident optical power, typically expressed in A/W at a specified wavelength and measurement condition.

Why does dark current matter?

Dark current contributes unwanted current and associated noise. Bias and temperature conditions affect the measured value.

Why is detector capacitance important?

Junction capacitance affects receiver front-end noise and achievable bandwidth in combination with the amplifier design.

Should I choose SMD or a TO package?

Choose based on mechanical alignment, PCB manufacturing, detector size, optical access and environment rather than package size alone.

OEM & Technical Support

Need a Photodiode Matched to Your Optical Source?

Share the wavelength, optical signal level, required speed and package constraints. Lumi can help review suitable silicon or InGaAs receiver options.

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