Silicon Photodiode

The JC1206PD0224 is a compact silicon 1206 SMD photodiode designed for infrared sensing and optoelectronic detection applications. It features high photosensitivity, fast response, a minimum reverse breakdown voltage of 33V , maximum reverse dark current of 10nA , and typical total capacitance of only 1pF . The device uses a silicon die with a water-clear lens and is supplied in a Pb-free, RoHS-compliant surface-mount package suitable for automated PCB assembly.

Main Advantage: Combines high photosensitivity and fast response with low 10nA maximum dark current and 1pF typical capacitance in a compact 1206 SMD package.
Category:
Technical & OEM Support

Need a laser or photonic component for your project?

Share your target wavelength, package requirements, application and estimated quantity. Our team can help evaluate suitable product options.

For faster evaluation, please include wavelength, optical power or detector requirements, package and expected order volume.

Description

PRODUCT PROFILE

1206 SMD Silicon Photodiode Overview

The

JC1206PD0224

is a compact

1206 SMD silicon photodiode

  • designed for optical detection and infrared sensing. The device combines high photosensitivity and fast response in a surface-mount package suitable for compact PCB integration.
  • The photodiode uses

silicon die material

and a

water-clear lens

. According to the datasheet, typical applications include infrared applied systems, optoelectronic switches and smoke alarms.

Key Performance: Minimum 33V reverse breakdown voltage, maximum 10nA reverse dark current and typical 1pF total capacitance in a compact 1206 SMD package.

TECHNICAL INFORMATION

Key Features

  • 1206 SMD photodiode
  • Silicon die material
  • High photosensitivity
  • Fast response time
  • Water-clear lens
  • Minimum 33V reverse breakdown voltage
  • Maximum 10nA reverse dark current
  • Typical total capacitance: 1pF
  • Pb-free construction
  • Compliant with EU RoHS requirements
  • Tape-and-reel packaging for automated assembly
TECHNICAL INFORMATION

Product Specifications

Parameter Specification
Model JC1206PD0224
Product Type 1206 SMD Photodiode
Die Material Silicon
Lens Color Water Clear
Reverse Voltage 33 V
Reverse Breakdown Voltage Min. 33 V
Reverse Dark Current Max. 10 nA
Open Circuit Voltage Typ. 390 mV
Short Circuit Current Typ. 2 µA
Reverse Light Current Typ. 2 µA
Total Capacitance Typ. 1 pF
Power Consumption 150 mW
Operating Temperature Range -25°C to +85°C
Storage Temperature Range -40°C to +100°C
Compliance Pb-free / RoHS compliant
TECHNICAL INFORMATION

Detailed Electrical Characteristics

The following detailed electrical characteristics are specified at

Ta = 25°C

. Test conditions are retained from the original datasheet without altering the source values.

Parameter Symbol Condition Min. Typ. Max. Unit
Reverse Dark Current ID VR = 10V, Ee = 0mW/cm² — — 10 nA
Reverse Breakdown Voltage V(BR)R IR = 100µA, Ee = 0mW/cm² 33 — — V
Open Circuit Voltage Voc T = 2856K, Ee = 5mW/cm² — 390 — mV
Short Circuit Current Isc T = 2856K, Ee = 5mW/cm² — 2 — µA
Reverse Light Current IL VR = 5V, T = 2856K, Ee = 5mW/cm² — 2 — µA
Total Capacitance CT VR = 5V, Ee = 0mW/cm², f = 1MHz — 1 — pF
TECHNICAL INFORMATION

Relative Spectral Responsivity

The datasheet provides a

Relative Responsivity vs. Wavelength

  • characteristic curve at Ta = 25°C. The plotted response increases through the visible and near-infrared region, reaches its highest relative responsivity in the near-infrared portion of the chart, and then decreases toward the long-wavelength end of the plotted range.
  • The curve should be used as a typical characteristic reference rather than interpreted as a guaranteed minimum or maximum spectral response specification.
JC1206PD0224 silicon photodiode relative responsivity versus wavelength curve
JC1206PD0224 Relative Responsivity vs. Wavelength
TECHNICAL INFORMATION

Absolute Maximum Ratings

Symbol Parameter Rated Unit
VR Reverse Voltage 33 V
PM Power Consumption 150 mW
Top Operating Temperature Range -25 to +85 °C
Tstg Storage Temperature Range -40 to +100 °C
TECHNICAL INFORMATION

1206 SMD Package Dimensions

The JC1206PD0224 is supplied in a compact 1206 surface-mount package. The original dimensional drawing provides package dimensions, device polarity and the recommended PCB soldering pad layout.

Package Parameter Dimension
Package Length 3.2 mm
Package Width 1.6 mm
Lens Width 1.88 mm
Overall Height 1.1 mm
Base Height 0.48 mm
JC1206PD0224 1206 SMD photodiode dimensions and recommended soldering pad
JC1206PD0224 External Dimensions, Polarity and Recommended Soldering Pad
TECHNICAL INFORMATION

Typical Applications

The original datasheet lists the JC1206PD0224 for several optical detection applications where a compact silicon photodiode is required.

  • Infrared applied systems
  • Optoelectronic switches
  • Smoke alarms
TECHNICAL INFORMATION

Tape and Reel Packaging

The JC1206PD0224 is supplied in

tape-and-reel packaging with 4000 pieces per reel

. The original packaging drawing also provides the progressive direction, carrier tape dimensions and photodiode polarity for automated surface-mount assembly.

JC1206PD0224 photodiode reel package dimensions
JC1206PD0224 Reel Packaging Dimensions
JC1206PD0224 photodiode carrier tape dimensions and polarity
JC1206PD0224 Carrier Tape Dimensions, Progressive Direction and Polarity
TECHNICAL INFORMATION

Storage and Handling

The datasheet specifies moisture-controlled storage and handling requirements before and after opening the package. These requirements should be followed before PCB mounting and soldering.

  • Do not open the moisture-proof bag before the devices are ready for use.
  • Before opening, store at 30°C or below and 60% RH or below.
  • The maximum storage period before opening the package is 1 year.
  • After opening, keep the devices at 30°C / 35% RH or below.
  • Use the devices within 7 days after opening.
  • If baking is required before mounting, use 60 ± 5°C for 12 hours.
TECHNICAL INFORMATION

Soldering Precautions

Proper handling and soldering conditions are important for maintaining device reliability. The datasheet specifies the following precautions for PCB assembly.

  • Use an appropriate current-limiting circuit where required by the application.
  • Avoid instantaneous high voltage during circuit turn-on and turn-off.
  • Reflow soldering should not be performed more than two times.
  • Do not apply mechanical stress to the device during soldering.
  • Do not warp the circuit board before it has returned to normal ambient conditions after soldering.
TECHNICAL INFORMATION

Request a Quote

Contact LumiLaserChip for pricing, samples, lead time and technical information for the

JC1206PD0224 1206 SMD silicon photodiode

. Please provide your required quantity, target application and relevant optical or electrical requirements when requesting a quotation.

SYSTEM INTEGRATION

Photodiode Receiver Design

For detector selection, match the spectral response to the emitter wavelength, and evaluate the stated light current, dark current, capacitance, bias conditions and mechanical mounting requirements.

ENGINEERING FAQ

Frequently Asked Questions

What type of photonic device is Silicon 1206 SMD Photodiode – JC1206PD0224?

Silicon 1206 SMD Photodiode – JC1206PD0224 belongs to the Silicon Photodiode product family and is used for photodetection applications.

What package is available for Silicon 1206 SMD Photodiode – JC1206PD0224?

The product is listed in 1206 SMD format. Check the package drawing and pin or fiber details above before integration.

What applications are associated with Silicon 1206 SMD Photodiode – JC1206PD0224?

The product is listed for Optical Detection. Suitability should be evaluated against the required optical and electrical specifications.

FURTHER READING

Related Technical Resources

Additional information

Device Technology

Silicon Photodiode

Wavelength Band

Broadband Photodetection

Application

Optical Detection

Package Type

1206 SMD

Device Function

Photodetection

Optical Interface

PCB Surface Mount

Related Products