InGaAs PIN Photodiode Methane Sensor TO Package (900–1700nm)
InGaAs PIN photodiode sensor with wide spectral response from 900–1700nm, designed for methane gas sensing, laser monitoring, and high-speed optical detection applications.
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Description
The InGaAs PIN Photodiode Methane Sensor is designed for high-sensitivity optical detection in gas sensing and laser monitoring applications. Featuring a wide spectral response range from 900 nm to 1700 nm, this photodiode is optimized for near-infrared detection, including methane (CH₄) sensing systems based on TDLAS technology.
Built with a large active area and front-illuminated structure, this device ensures high responsivity and stable signal detection across key wavelengths such as 1310 nm, 1550 nm, and 1650 nm. The TO52 package provides compact integration and reliable performance in industrial and scientific environments.
With low dark current, fast response speed, and high bandwidth, this photodiode is well suited for laser monitoring, optical sensing, and precision detection applications. It is an ideal companion component for DFB laser diodes in gas detection modules.
Key Features
• Wide spectral response from 900 nm to 1700 nm
• High responsivity up to 1.05 A/W
• Low dark current down to 3 nA
• High-speed response with 0.1 GHz bandwidth
• Large active area for enhanced signal detection
• TO52 compact package for easy integration
• Anti-reflection coated flat window
• Nitrogen-filled for improved stability
Applications
• Methane (CH₄) gas sensing systems
• TDLAS detection modules
• Laser diode monitoring
• Optical power detection
• Industrial and environmental sensing
Technical Parameters
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Wavelength Range | λ | – | 900 | – | 1700 | nm |
| Responsivity | Re | VR = 5V, λ = 1310 nm | 0.9 | 0.95 | – | A/W |
| Responsivity | Re | VR = 5V, λ = 1550 nm | 1.0 | 1.05 | – | A/W |
| Responsivity | Re | VR = 5V, λ = 1650 nm | 1.0 | 1.05 | – | A/W |
| Dark Current | Id | VR = 5V, 25°C | – | – | 3 | nA |
| Capacitance | C | VR = 5V, f = 1 MHz | – | – | 20 | pF |
| Bandwidth (-3 dB) | BW | – | – | 0.1 | – | GHz |
All data are tested at 25°C
Absolute Maximum Ratings
| Parameter | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Reverse Voltage | VR | – | 20 | V |
| Storage Temperature | Ts | -40 | 125 | °C |
| Operating Temperature | Top | -20 | 75 | °C |
| ESD Susceptibility | ESD | – | 500 | V |
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