

1550nm Single Mode High Power FP Laser Diode QCW TO Package
1550nm high power FP laser diode with QCW operation and single mode output, delivering up to 320 mW pulsed power for optical communication, LiDAR, and distance measurement applications.
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Description
The 1550nm Single Mode High Power FP Laser Diode in QCW TO Package is designed for applications requiring high peak power and stable single-mode performance. Utilizing Fabry-Perot (FP) laser technology, this device provides excellent output efficiency and reliable operation under quasi-continuous wave (QCW) conditions.
This laser diode delivers high pulsed output power up to 320 mW, making it ideal for applications such as optical communication and laser ranging. With optimized slope efficiency and low threshold current, the device ensures efficient power conversion and stable optical output.
Operating at a central wavelength around 1550 nm, this laser diode benefits from low transmission loss and strong atmospheric compatibility. The TO package structure enables compact integration and effective thermal management, making it suitable for both industrial and scientific applications.
Key Features
• High pulsed output power up to 320 mW
• Single mode operation for stable output
• QCW operation for high peak performance
• Low threshold current around 20.5 mA
• High slope efficiency up to 0.4 W/A
• Compact TO package for easy integration
Applications
• Optical communication systems
• Laser ranging (LiDAR)
• Distance measurement systems
• Industrial sensing applications
• Scientific and research applications
Technical Parameters
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Threshold Current | Ith | CW, 25°C | – | 20.5 | 21 | mA |
| Slope Efficiency | SE | I = Ith + 20 mA, QCW | 0.36 | 0.4 | – | W/A |
| Output Power (Pulsed) | Po | I = 1000 mA, QCW, 25°C | 300 | 320 | – | mW |
| Output Power (85°C) | Po | I = 1000 mA, QCW, 85°C | – | 190 | – | mW |
| Forward Voltage | Vf | I = 1000 mA, QCW | – | 2.2 | 2.4 | V |
| Series Resistance | Rs | I = 500 mA, 25°C | – | 1.3 | 1.45 | Ω |
| Center Wavelength | λc | I = 500 mA, QCW | – | 1544 | – | nm |
| Wavelength Temp. Coefficient | Δλ/ΔT | 25–85°C | – | 0.53 | – | nm/°C |
QCW condition: Pulse width = 10 µs, Duty cycle = 1%
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