Heating DFB 1650.9nm Laser Diode for Methane Gas Sensing TO Package

heating DFB 1650.9nm laser diode optimized for methane gas sensing, featuring high wavelength stability and precision, ideal for TDLAS systems and industrial gas detection applications.

Description

The 1650.9nm Heating DFB Laser Diode is specifically designed for methane (CH₄) gas sensing applications based on tunable diode laser absorption spectroscopy (TDLAS). Featuring an integrated heating structure, this device ensures precise wavelength control and stable operation across a wide temperature range.

Operating at the characteristic methane absorption wavelength around 1650.9 nm, this DFB laser diode provides high sensitivity and accuracy for gas detection systems. Its low threshold current and high output stability enable efficient performance in compact sensing modules.

The TO56 package with a 5-pin configuration allows for easy integration into gas sensor systems, while offering excellent reliability and long-term stability. This device is ideal for industrial gas monitoring, environmental sensing, and safety detection applications where precision and reliability are critical.

Key Features

• Optimized 1650.9 nm wavelength for CH₄ gas detection
• Integrated heating structure for wavelength stability
• Low threshold current down to 10 mA
• High wavelength precision and stability
• Compact TO56 5-pin package
• Wide operating temperature range (-5°C to 75°C)
• High reliability for long-term sensing applications

Applications

• Methane (CH₄) gas sensing systems
• TDLAS gas detection modules
• Industrial gas monitoring
• Environmental monitoring systems
• Safety and leakage detection systems

Technical Parameters

Parameter Symbol Condition Min Typ Max Unit
Threshold Current Ith 25°C 10 15 mA
Operating Voltage Vop Iop = 50 mA 1.2 1.6 V
Output Power Po Iop = 50 mA 4 6 mW
Slope Efficiency SE If = 25–65 mA 0.15 0.2 mW/mA
Center Wavelength λc Iop = 50 mA 1649.9 1650.9 1651.9 nm
SMSR SMSR Iop = 50 mA 35 dB
Temperature Coefficient Iop = 50 mA 0.1 nm/°C
Current Coefficient Iop = 50 mA 0.02 nm/mA
Resistance Rs 15 Ω

All data are tested at 25°C

Absolute Maximum Ratings

Parameter Symbol Min Max Unit
Forward Current If 100 mA
Laser Reverse Voltage VRL 2 V
Operating Temperature To -5 75 °C
Storage Temperature TSTG -40 100 °C

Product Size

Pin Diagram

Pin Function
1 R
2 Thermistor
3 LD (-)
4 LD (+)
5 GND

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