The 940nm Silicon Photodiode is a compact optical detector featuring a 3mm-class photosensitive area and a reliable TO-5 metal package. It provides a typical peak sensing wavelength of 940nm, typical light current of 162µA, maximum reverse dark current of 10nA, minimum reverse breakdown voltage of 35V, and typical total capacitance of 20pF. The device is suitable for near-infrared optical sensing, detection and monitoring systems.
- Description
Description
940nm Silicon Photodiode Overview
The 940nm Silicon Photodiode is designed for near-infrared optical sensing and detection applications. It combines a 3mm-class active area, typical 940nm peak response and a durable TO-5 metal package for reliable system integration.
The photodiode provides a typical light current of 162µA under the specified 940nm illumination condition, together with a maximum reverse dark current of 10nA and a minimum reverse breakdown voltage of 35V.
Key Features
- Silicon photodiode
- Typical peak sensing wavelength: 940nm
- 3mm-class photosensitive area
- TO-5 metal package
- Typical light current: 162µA
- Maximum reverse dark current: 10nA
- Minimum reverse breakdown voltage: 35V
- Typical total capacitance: 20pF
- Suitable for near-infrared optical detection
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF = 10mA, H = 0 | 0.5 | — | 1.3 | V |
| Reverse Breakdown Voltage | VBR | IR = 100µA, H = 0 | 35 | — | — | V |
| Reverse Dark Current | ID | VR = 10V, H = 0 | — | — | 10 | nA |
| Light Current | IL | VR = 5V, H = 1mW/cm² @ 940nm | — | 162 | — | µA |
| Peak Sensing Wavelength | λp | — | — | 940 | — | nm |
| Total Capacitance | Ct | Ee = 0mW/cm², VR = 3V, f = 1MHz | — | 20 | 40 | pF |
940nm Spectral Response
The photodiode provides strong near-infrared sensitivity with a typical peak sensing wavelength of 940nm. Its spectral response extends across a broad visible-to-near-infrared region, with maximum relative responsivity concentrated around the near-infrared portion of the response curve.
This spectral characteristic makes the device suitable for optical systems using 940nm emitters and other near-infrared light sources.
Low Dark Current Performance
The maximum reverse dark current is 10nA at VR = 10V under dark conditions. Low dark current helps reduce background electrical noise and supports stable signal detection in low-light optical sensing applications.
Optical Detection Performance
Under a 940nm illumination level of 1mW/cm² with a reverse voltage of 5V, the photodiode provides a typical light current of 162µA. This response supports near-infrared light detection, monitoring and signal-receiving applications.
Capacitance Characteristics
The photodiode provides a typical total capacitance of 20pF and a maximum of 40pF at VR = 3V and f = 1MHz under zero illumination. Capacitance should be considered when designing the transimpedance amplifier and response-speed characteristics of the receiver circuit.
TO-5 Package and Pin Definition
The device is supplied in a robust TO-5 metal package designed for reliable optical and mechanical integration. The package drawing provides top, bottom and side views together with the electrical pin definition.
Typical Applications
- 940nm infrared sensing
- Optical detection systems
- Near-infrared receivers
- Optical power monitoring
- Industrial optical sensors
- Measurement instruments
- Light detection and control systems
- OEM optoelectronic modules
940nm Emitter and Detector Integration
The 940nm peak sensing wavelength makes this silicon photodiode suitable for receiver designs paired with compatible 940nm laser diodes, VCSELs or infrared emitters. Matching the emitter wavelength with the detector response helps improve optical system efficiency and signal strength.
OEM Integration Support
We support silicon photodiode projects for near-infrared sensing and optical detection systems. Device selection and receiver integration can be evaluated according to wavelength, active area, detector current, capacitance, package and circuit requirements.
For OEM projects, please provide the required wavelength, optical power or irradiance level, detector response requirements, operating conditions, sample quantity and estimated annual demand.
Request a Quote
Contact LumiLaserChip for pricing, samples, lead time and technical support for the 940nm Silicon Photodiode in TO-5 package. Our team can support product selection and integration for optical sensing, measurement and near-infrared detection applications.
